Pixel structure and thin film transistor

摘要

A pixel structure including a first thin film transistor (TFT), a second TFT and a storage capacitor is provided. The source electrode of the first TFT is connected to the gate electrode of the second TFT, and the semiconductor layer of the second TFT protrudes out two opposite side of the gate electrode of the second TFT. A thin film transistor including a gate electrode, a capacitance compensation structure, a semiconductor layer, a dielectric layer, a drain electrode and a source electrode is also provided. The capacitance compensation structure is electrically connected to the gate electrode. The semiconductor layer partially overlaps the gate electrode, and extends to overlap the capacitance compensation structure.

主权项

1. A pixel structure, comprising:
a first thin-film transistor, having a first gate electrode, a first source electrode, a first drain electrode and a first semiconductor layer, wherein the first source electrode and the first drain electrode are in contact with the first semiconductor layer; a second thin-film transistor, having a second gate electrode, a second source electrode, a second drain electrode and a second semiconductor layer, wherein the second source electrode and the second drain electrode are in contact with the second semiconductor layer, the second gate electrode has a first side facing the first gate electrode and a second side facing away from the first gate electrode, the second gate electrode is connected to the first source electrode, the second semiconductor layer has a first protruding portion protruding from the first side of the second gate electrode along a first direction and a second protruding portion protruding from the second side of the second gate electrode along the first direction, an area of the first protruding portion is substantially less than an area of the second protruding portion, and the second semiconductor layer is not in contact with the first semiconductor layer; and a storage capacitor, having an upper electrode, a lower electrode and an insulation layer interposed between the upper electrode and the lower electrode, wherein the second source electrode and a portion of the second semiconductor layer constitute the upper electrode, a portion of the second gate electrode constitutes the lower electrode, the insulation layer is further disposed between the first gate electrode of the first thin-film transistor and the first semiconductor layer of the first thin-film transistor and between the second gate electrode of the second thin-film transistor and the second semiconductor layer of the second thin-film transistor.