ZnO buffer layer for metal films on silicon substrates

摘要

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

主权项

1. An electroceramic thin film stack, comprising:
an oxidized silicon substrate; a ZnO buffer layer deposited on the silicon substrate; a metal layer deposited on the ZnO buffer layer; and a complex oxide layer or a doped complex oxide layer deposited on the metal layer.