Etching method and device

摘要

An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch the insulating film to a portion in the thickness direction; a deposition material removing step for exposing the insulating film remaining after completion of the first etching to oxygen plasma to remove deposition material deposited on the surface of the remaining insulating film; and a second etching of exposing the remaining insulating film to processing gas that has been turned into a plasma to etch the remaining insulating film.

主权项

1. An etching method for etching an insulating film formed on a substrate, comprising:
first etching of exposing the insulating film to a plasma of a first processing gas to thereby etch the insulating film to a position in a thickness direction, wherein a deposition material is deposited on a surface of the insulating film during the etching, the first processing gas comprising carbon, fluorine, oxygen and hydrogen; deposition material removing of exposing, to an oxygen plasma, the deposition material deposited on the insulating film remaining after completion of the first etching to thereby remove the deposition material on the remaining insulating film; and second etching of exposing the insulating film remaining after completion of the deposition material removing to a plasma of a second processing gas to thereby etch the remaining insulating film, the second processing gas comprising carbon, fluorine, oxygen and hydrogen.