发明名称 |
Zinc oxide photoelectrodes and methods of fabrication |
摘要 |
A substrate-supported photoelectrode, which includes an essentially two-dimensional transparent conductive oxide (TCO) film supported by a substrate, wherein the film is doped with at least one element of Group III, and one or more single crystal essentially one-dimensional nanostructures that are integral with the film and grown upwardly therefrom without a boundary layer therebetween, wherein the film and the nanostructures are essentially identical in composition and include zinc oxide or a zinc oxide alloy. Methods for preparing the substrate-supported photoelectrode and solar cells incorporating the substrate-supported photoelectrode are also provided. |
申请公布号 |
US8835756(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US200711963757 |
申请日期 |
2007.12.21 |
申请人 |
Rutgers, The State University of New Jersey |
发明人 |
Lu Yicheng;Pasquier Aurelien Du;Chen Hanhong |
分类号 |
H01L31/0224;C23C16/40;H01G9/20;H01L51/42;B82Y10/00;H01L51/44;H01L31/18;H01L51/00 |
主分类号 |
H01L31/0224 |
代理机构 |
Fox Rothschild LLP |
代理人 |
Fox Rothschild LLP |
主权项 |
1. A substrate-supported three-dimensional (3-D) photoelectrode comprising:
an essentially two-dimensional (2-D) transparent zinc oxide electrode film disposed directly on a non-conductive substrate without a boundary layer therebetween, wherein said 2-D film is doped with at least one element selected from the group consisting of Al, Ga, and B; and an array of single crystal essentially one-dimensional (1-D) nanostructures that are integral with said 2-D film and extend upwardly therefrom without a boundary layer therebetween, wherein said one or more 1-D nanostructures are not in direct contact with the substrate and are aligned normal to said 2-D film, wherein said nanostructures comprise a zinc oxide based alloy. |
地址 |
New Brunswick NJ US |