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发明名称
矽基板的再结合寿命测定方法;MEASURING METHOD OF RE-COUPLING LIFE TIME OF SILICON SUBSTRATE
摘要
本发明是在于提供一种可高精度评价矽基板制造制程或装置制造制程的金属污染或结晶缺陷之矽基板的再结合寿命测定方法。本发明是在对矽基板的表面进行化学钝化处理之后,测定再结合寿命的方法,从前述化学钝化处理到前述再结合寿命的测定完了的期间,至少进行自紫外线防护前述矽基板的紫外线防护处理。
申请公布号
TW201436077
申请公布日期
2014.09.16
申请号
TW103101422
申请日期
2014.01.15
申请人
信越半导体股份有限公司
发明人
竹野博
分类号
H01L21/66(2006.01)
主分类号
H01L21/66(2006.01)
代理机构
代理人
<name>林志刚</name>
主权项
地址
SHIN-ETSU HANDOTAI CO., LTD. 日本
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