Semiconductor device and method for manufacturing the same

摘要

A semiconductor device according to an embodiment of the present invention includes fuse patterns spaced apart from each other by a predetermined distance over a first interlayer insulation film; a second interlayer insulation film disposed between the fuse patterns over the first interlayer insulation film; and a capping film pattern formed over the fuse patterns and the second interlayer insulation films, the capping film pattern including a slot exposing the second interlayer insulation film.

主权项

1. A semiconductor device comprising:
first and second fuse patterns spaced apart from each other by a predetermined distance over a first interlayer insulation film, wherein middle portions of the first and second fuse patterns are blowing regions; a second interlayer insulation film disposed between the first and second fuse patterns; and a capping film pattern disposed over the first and second fuse patterns and the second interlayer insulation film including a slot exposing a portion of the second interlayer insulation film; wherein a long-axis length of the slot is longer than a long-axis length of the blowing regions of the fuse patterns and is shorter than a long-axis length of the first and second fuse patterns.