Semiconductor memory device

摘要

A semiconductor memory device includes linear patterns disposed between isolation trenches extending in a first direction in a semiconductor device and having a first crystal direction the same as the semiconductor substrate. A bridge pattern connects at least two adjacent linear patterns and includes a semiconductor material having a second crystal direction different from the first crystal direction. A first isolation layer pattern is disposed in at least one of the isolation trenches in a field region of the semiconductor substrate. Memory cells are disposed on at least one of the linear patterns.

主权项

1. A semiconductor memory device, comprising:
a plurality of linear patterns disposed between a plurality of isolation trenches extending in a first direction in a semiconductor device and having a first crystal direction the same as a semiconductor substrate; a bridge pattern connecting at least two adjacent linear patterns and including a semiconductor material having a second crystal direction different from the first crystal direction; a first isolation layer pattern disposed in at least one of the isolation trenches in a field region of the semiconductor substrate; and a plurality of memory cells disposed on at least one of the linear patterns, wherein the bridge pattern completely fills up the at least one of the isolation trenches in an active region of the semiconductor substrate, and wherein a bottom surface of the bridge pattern is in direct contact with the semiconductor substrate.