| 发明名称 | Fin-based adjustable resistor | ||
| 摘要 | According to one exemplary embodiment, a fin-based adjustable resistor includes a fin channel of a first conductivity type, and a gate surrounding the fin channel. The fin-based adjustable resistor also includes first and second terminals of the first conductivity type being contiguous with the fin channel, and being situated on opposite sides of the fin channel. The fin channel is lower doped relative to the first and second terminals. The resistance of the fin channel between the first and second terminals is adjusted by varying a voltage applied to the gate so as to achieve the fin-based adjustable resistor. The gate can be on at least two sides of the fin channel. Upon application of a depletion voltage, the fin channel can be depleted before an inversion is formed in the fin channel. | ||
| 申请公布号 | US8836032(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201113277547 | 申请日期 | 2011.10.20 |
| 申请人 | Broadcom Corporation | 发明人 | Xia Wei;Chen Xiangdong |
| 分类号 | H01L27/12;H01L29/78 | 主分类号 | H01L27/12 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A fin-based adjustable resistor, said fin-based adjustable resistor comprising: a fin channel of a first conductivity type; a gate surrounding said fin channel; first and second terminals of said first conductivity type being contiguous with said fin channel, and being situated on opposite sides of said fin channel; said fin channel being lower doped relative to said first and second terminals; wherein a resistance of said fin channel between said first and second terminals is adjusted by varying a voltage applied to said gate so as to achieve said fin-based adjustable resistor, and upon application of a depletion voltage said fin channel is depleted before an inversion is formed in said fin channel. | ||
| 地址 | Irvine CA US | ||