| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region. | ||
| 申请公布号 | US8836150(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201013989962 | 申请日期 | 2010.11.29 |
| 申请人 | Toyota Jidosha Kabushiki Kaisha | 发明人 | Tanaka Hiroaki |
| 分类号 | H01L23/498;H01L23/00;H01L29/739;H01L29/417 | 主分类号 | H01L23/498 |
| 代理机构 | Kenyon & Kenyon LLP | 代理人 | Kenyon & Kenyon LLP |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate, wherein the upper surface electrode comprises a first thickness region and a second thickness region which is thicker than the first thickness region, an upper surface of the first thickness region is lower than an upper surface of the second thickness region, and a bonding wire is bonded on the second thickness region, and a slit portion is provided at a boundary between the first thickness region and the second thickness region in the upper surface electrode. | ||
| 地址 | Toyota-Shi JP | ||