Sensors using high electron mobility transistors

摘要

Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.

主权项

1. A high electron mobility transistor (HEMT) based sensor comprising:
a HEMT having a source, a drain, and a gate area at least one target receptor on the gate region of the HEMT, the at least one target receptor functionalizing the HEMT as a sensor for a target corresponding to the at least one target receptor, wherein the source of the HEMT is configured to receive a fixed voltage and an output current resulting from exposure of the at least one target receptor to an amount of the target is sensed at the drain of the HEMT; and wherein the HEMT is an AlGaAs/GaAs HEMT, an InGaP/GaAs HEMT, an InAlAs/InGaAs HEMT, an AlGaAs/InGaAs PHEMT, an InAlAs/InGaAs PHEMT, an Sb based HEMT, or an InAs based HEMT.