发明名称 Semiconductor device and method for manufacturing the same
摘要 A method for manufacturing a semiconductor device includes forming a device isolation film defining an active region, forming a recess configured to expose a seam contained in the device isolation film by etching the active region and the device isolation film, forming a sacrificial film to fill the exposed seam, and forming a gate at a lower part of the recess.
申请公布号 US8835280(B1) 申请公布日期 2014.09.16
申请号 US201314046531 申请日期 2013.10.04
申请人 SK Hynix Inc. 发明人 Ryu Seong Wan
分类号 H01L21/28;H01L29/51 主分类号 H01L21/28
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device comprising: forming a device isolation film defining an active region; forming a recess configured to expose a seam contained in the device isolation film by etching the active region and the device isolation film; forming a sacrificial film to fill the exposed seam; and forming a gate in a lower part of the recess.
地址 Icheon KR