| 发明名称 | Memory device, operation method thereof and memory system having the same | ||
| 摘要 | A memory refresh method includes selecting at least one bank from among N banks of a memory device, and activating K word lines from among a plurality of word lines included in the at least one bank during one of L refresh cycles of a refresh period. Each of the N banks comprises M word lines, N, K and M are each a natural number greater than or equal to two, L is a natural number less than or equal to M, and K is equal to M*N/L. | ||
| 申请公布号 | US8837246(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201313803520 | 申请日期 | 2013.03.14 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Ki Heung;Jeong In Chul |
| 分类号 | G11C7/00;G11C11/402;G11C11/406 | 主分类号 | G11C7/00 |
| 代理机构 | F. Chau & Associates, LLC | 代理人 | F. Chau & Associates, LLC |
| 主权项 | 1. A memory refresh method, comprising: selecting at least one bank from among N banks of a memory device; and activating K word lines from among a plurality of word lines included in the at least one bank during one of L refresh cycles of a refresh period, wherein each of the N banks comprises M word lines, N, K and M are each a natural number greater than or equal to two, L is a natural number less than or equal to M, and K is equal to M*N/L. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||