发明名称 |
Semiconductor device |
摘要 |
The data in a volatile memory may conventionally be lost even in case of a very short time power down or supply voltage drop such as an outage or sag. In view of the foregoing, an object is to extend data retention time even with a volatile memory for high-speed data processing. Data retention time can be extended by backing up the data content stored in the volatile memory in a memory including a capacitor and an oxide semiconductor transistor. |
申请公布号 |
US8837203(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US201213467490 |
申请日期 |
2012.05.09 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Shionoiri Yutaka;Kobayashi Hidetomo |
分类号 |
G11C11/24;H01L27/105;H01L21/84;H01L27/12;G11C11/00;H01L27/115;H01L27/108 |
主分类号 |
G11C11/24 |
代理机构 |
Robinson Intellectual Property Law Office, P.C. |
代理人 |
Robinson Eric J.;Robinson Intellectual Property Law Office, P.C. |
主权项 |
1. A semiconductor device comprising a memory cell including:
a memory; a first transistor including an oxide semiconductor layer; a first capacitor; and a switch, wherein an output port of the memory is electrically connected to one terminal of the switch, wherein the other terminal of the switch is electrically connected to one of a source and a drain of the first transistor, and wherein the other of the source and the drain of the first transistor is electrically connected to the first capacitor. |
地址 |
Atsugi-shi, Kanagawa-ken JP |