发明名称 Semiconductor device
摘要 The data in a volatile memory may conventionally be lost even in case of a very short time power down or supply voltage drop such as an outage or sag. In view of the foregoing, an object is to extend data retention time even with a volatile memory for high-speed data processing. Data retention time can be extended by backing up the data content stored in the volatile memory in a memory including a capacitor and an oxide semiconductor transistor.
申请公布号 US8837203(B2) 申请公布日期 2014.09.16
申请号 US201213467490 申请日期 2012.05.09
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Shionoiri Yutaka;Kobayashi Hidetomo
分类号 G11C11/24;H01L27/105;H01L21/84;H01L27/12;G11C11/00;H01L27/115;H01L27/108 主分类号 G11C11/24
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A semiconductor device comprising a memory cell including: a memory; a first transistor including an oxide semiconductor layer; a first capacitor; and a switch, wherein an output port of the memory is electrically connected to one terminal of the switch, wherein the other terminal of the switch is electrically connected to one of a source and a drain of the first transistor, and wherein the other of the source and the drain of the first transistor is electrically connected to the first capacitor.
地址 Atsugi-shi, Kanagawa-ken JP