Lateral transistor on polymer

摘要

Representative implementations of devices and techniques provide a high-voltage device on a semiconductor substrate. An insulating polymer layer is formed on an opposite surface to the high-voltage device, the insulating polymer layer having a thickness of at least twice that of the semiconductor substrate.

主权项

1. A device, comprising:
a thin-film semiconductor substrate; a transistor formed on a first surface of the thin-film semiconductor substrate; and an insulating polymer layer formed on a second surface of the thin-film semiconductor substrate, the insulating polymer layer having a thickness that is at least twice as thick as a thickness of the thin-film semiconductor substrate.