Semiconductor device manufacturing method

摘要

A method of forming a device in each of vertical trench gate MOSFET region and control lateral planar gate MOSFET region of a semiconductor substrate is disclosed. A trench is formed in the substrate in the vertical trench gate MOSFET region, a first gate oxide film is formed along the internal wall of the trench, and the trench is filled with a polysilicon film. A LOCOS oxide film is formed in a region isolating the devices. A second gate oxide film is formed on the substrate in the lateral planar gate MOSFET region. Advantages are that number of steps is suppressed, the gate threshold voltage of an output stage MOSFET is higher than the gate threshold voltage of a control MOSFET, the thickness of the LOCOS oxide film does not decrease, and no foreign object residue remains inside the trench.

主权项

1. A method of manufacturing a semiconductor device including a main semiconductor device portion having a first semiconductor region of a first conductivity type formed on a first main surface side of a first conductivity type semiconductor substrate, a second conductivity type semiconductor region selectively formed in a surface layer on a second main surface side of the first conductivity type semiconductor substrate, a second semiconductor region of a first conductivity type selectively formed in a surface layer of the second conductivity type semiconductor region, a trench penetrating from the surface of the second conductivity type semiconductor region through the second conductivity type semiconductor region and the second semiconductor region of the first conductivity type and reaching the first conductivity type semiconductor substrate, a first gate oxide film formed along the internal wall of the trench, and a gate electrode formed on the first gate oxide film inside the trench, a device isolation portion, selectively formed on the surface on the second main surface side of the first conductivity type semiconductor substrate, that has a selective oxide film of a thickness greater than that of the first gate oxide film, and a control semiconductor device portion that controls the main semiconductor device portion, having a well diffusion region of a second conductivity type formed in a surface layer of a portion on the second main surface side of the first conductivity type semiconductor substrate isolated from the main semiconductor device portion by the device isolation portion, a control gate electrode formed on a second gate oxide film on the surface of the second conductivity type well diffusion region, a first conductivity type control source region selectively formed in a surface layer of the second conductivity type well diffusion region, and a first conductivity type control drain region formed apart from the first conductivity type control source region in a surface layer of the second conductivity type well diffusion region, sandwiching a portion of the second conductivity type well diffusion region that opposes the control gate electrode,
the semiconductor device manufacturing method comprising the following steps:
a trench formation step of forming the trench in the second main surface of the first conductivity type semiconductor substrate;a first gate oxide film formation step of forming the first gate oxide film along the internal wall of the trench;a gate electrode formation step of forming the gate electrode on the first gate oxide film inside the trench;a selective oxide film formation step of selectively forming the selective oxide film on the second main surface of the first conductivity type semiconductor substrate;a second gate oxide film formation step of forming the second gate oxide film of a thickness less than that of the first gate oxide film on the second main surface of the first conductivity type semiconductor substrate; anda control gate electrode formation step of forming the control gate electrode on the second gate oxide film,wherein the trench formation step, first gate oxide film formation step, gate electrode formation step, selective oxide film formation step, second gate oxide film formation step, and control gate electrode formation step are carried out in this order.