| 发明名称 | Semiconductor devices | ||
| 摘要 | Semiconductor devices are disclosed. The semiconductor device may include a semiconductor substrate having a first surface and a second surface opposite to each other and a pad trench formed at a portion of the second surface, a through-electrode penetrating the semiconductor substrate and protruding from a bottom surface of the pad trench. A buried pad may be disposed in the pad trench and may surround the through-electrode. | ||
| 申请公布号 | US8836142(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201313911569 | 申请日期 | 2013.06.06 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Park Yeun-Sang;Park Byung-Lyul;Kang SungHee;Kim Taeseong;Moon Kwangjin;Bang Sukchul |
| 分类号 | H01L23/52;H01L23/528;H01L23/48 | 主分类号 | H01L23/52 |
| 代理机构 | Myers Bigel Sibley & Sajovec, P.A. | 代理人 | Myers Bigel Sibley & Sajovec, P.A. |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor substrate having a top surface and a bottom surface that is opposite the top surface and a pad trench that is formed at a portion of the bottom surface; a through-electrode that is configured to penetrate the semiconductor substrate and to protrude from a bottom surface of the pad trench; a buried pad that is disposed in the pad trench and that substantially surrounds the through electrode; a conductive connecting pad formed on the bottom surface of the semiconductor substrate and that contacts the through-electrode and the buried pad; and a pad insulating layer that is disposed between the through-electrode and the buried pad. | ||
| 地址 | KR | ||