发明名称 |
Semiconductor light emitting chip and method for processing substrate |
摘要 |
Disclosed is a semiconductor light emitting chip (20) that is composed of: a substrate (10), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces (25, 26) configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions (23, 24) in the side surfaces (25, 26), the modified regions being formed by laser radiation; and a light emitting element (12), which is provided on the substrate front surface (10a) of the substrate (10). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate. |
申请公布号 |
US8836086(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US201113639608 |
申请日期 |
2011.02.16 |
申请人 |
Toyoda Gosei Co., Ltd. |
发明人 |
Hiraiwa Daisuke;Okabe Takehiko |
分类号 |
H01L33/16;H01L33/00;B23K26/40;B23K26/00;H01S5/02;H01L33/20;H01L33/32;H01S5/32 |
主分类号 |
H01L33/16 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A semiconductor light emitting chip comprising:
a substrate in which a C plane of a sapphire single crystal is assumed to be a front surface, and a side surface is configured with a plane that intersects any of planes equivalent to an M plane of the sapphire single crystal, the substrate including modified regions formed by laser irradiation in the side surface; and a semiconductor light emitting element provided on the front surface of the substrate, wherein, in the front surface of the substrate, a crossing angle of the side surface intersecting the M plane of the sapphire single crystal is 10° or more and 20° or less. |
地址 |
Aichi JP |