Semiconductor device and fabrication method thereof

摘要

According to one embodiment, a fabrication method for a semiconductor device includes: injecting an ion into a first substrate; joining the first substrate and a second substrate; irradiating a microwave to agglomerate the ion in a planar state in a desired position in the first substrate and form an agglomeration region spreading in a planar state; separating the second substrate provided with a part of the first substrate from the rest of the first substrate by exfoliating the joined first substrate from the second substrate in the agglomeration region; and grinding a part of the second substrate on a back surface opposite to an exfoliated surface in the second substrate provided with a part of the first substrate.

主权项

1. A fabrication method for a semiconductor device comprising:
injecting ions into a first substrate; joining the first substrate and a second substrate; irradiating the first substrate and the second substrate with a microwave having a frequency of 5.8 GHz or more and 30 GHz or less such that torsional vibrations of bonds between atoms in the first substrate are caused, to agglomerate the ions in a planar state in a desired position in the first substrate and form an agglomeration region spreading in a planar state; separating the second substrate provided with a part of the first substrate from the rest of the first substrate by exfoliating the joined first substrate from the second substrate in the agglomeration region; and grinding a part of the second substrate on a back surface opposite to an exfoliated surface in the second substrate provided with a part of the first substrate.