Semiconductor system including a schottky diode

摘要

A semiconductor system is described, which includes a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element, which is suitable for use in motor vehicle generator system, in particular as a Zener diode having a breakdown voltage of approximately 20V. In this case, the TJBS is a combination of a Schottky diode and a p-n type diode. Where the breakdown voltages are concerned, the breakdown voltage of the p-n type diode is lower than the breakdown voltage of Schottky diode. The semiconductor system may therefore be operated using high currents at breakdown.

主权项

1. A semiconductor system, comprising:
an n+-type substrate; an n-type epilayer which is located on the n+-type substrate and acts as a cathode zone; and a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element; wherein:
the trench junction barrier Schottky diode is a combination of a Schottky diode and a p-n type diode;a breakdown voltage of the p-n type diode is lower than a breakdown voltage of the Schottky diode;at least two trenches are etched into the n-type epilayer and form an anode zone of the p-n type diode; andthe trenches are each divided into a respective upper area filled with highly-doped p+ Si or p+ poly-Si, a respective middle area filled with low-doped p Si or p poly-Si, and a respective lower area filled with highly-doped p+ Si or p+ poly-Si.