发明名称 Integrated passive component
摘要 An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a passivation layer formed on the surface, an integrated circuit formed near the surface of the semiconductor body, whereby the integrated circuit is connected to metal surfaces via traces formed below the passivation layer, a part of the metal surfaces is connected to pins via bonding wires, and a first coil formed above the passivation layer, whereby the first coil with a plurality of turns has a longitudinal axis formed substantially parallel to the surface of the semiconductor body, and in a lower part of the first coil, said part which is formed substantially parallel to the longitudinal axis of the coil on the surface of the semiconductor body, parts of a plurality of turns are formed as sections of traces.
申请公布号 US8836063(B2) 申请公布日期 2014.09.16
申请号 US201213464327 申请日期 2012.05.04
申请人 Micronas GmbH 发明人 Franke Joerg
分类号 H01L29/82;H01L27/22;H01L23/522;H01L49/02;H01L23/00 主分类号 H01L29/82
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. An integrated passive component comprising: a semiconductor body arranged on a metal substrate, said semiconductor body having a first surface and a second surface, with a plurality of metal surfaces formed on the first surface and having an entire extent of said second surface contacting said metal substrate; a passivation layer formed on the first surface; an integrated circuit formed in the semiconductor body near the first surface of the semiconductor body, the integrated circuit being connectable to the metal surfaces via traces formed in the semiconductor body below the passivation layer, a portion of the metal surfaces being connectable to pins via bonding wires; and a first coil having a lower part and an upper part and having a plurality of turns, said first coil further having a longitudinal axis formed substantially parallel to the first surface of the semiconductor body, wherein, in said lower part of the first coil, parts of said plurality of turns are formed as sections of the traces formed in the semiconductor body below said passivation layer and at least one turn of the first coil is formed from a wire in said upper part above the passivation layer.
地址 Freiburg LBr. DE
您可能感兴趣的专利