发明名称 Hybrid integrated component and method for the manufacture thereof
摘要 A component system includes at least one MEMS element, a cap for a micromechanical structure of the MEMS element, and at least one ASIC substrate. The micromechanical structure of the MEMS element is implemented in the functional layer of an SOI wafer. The MEMS element is mounted face down, with the structured functional layer on the ASIC substrate, and the cap is implemented in the substrate of the SOI wafer. The ASIC substrate includes a starting substrate provided with a layered structure on both sides. At least one circuit level is implemented in each case both in the MEMS-side layered structure and in the rear-side layered structure of the ASIC substrate. In the ASIC substrate, at least one ASIC through contact is implemented which electrically contacts at least one circuit level of the rear-side layered structure and/or at least one circuit level of the MEMS-side layered structure.
申请公布号 US8836053(B2) 申请公布日期 2014.09.16
申请号 US201313890450 申请日期 2013.05.09
申请人 Robert Bosch GmbH 发明人 Weber Heribert;Fischer Frank;Hattass Mirko;Bergmann Yvonne
分类号 H01L29/84;B81B3/00;B81C1/00 主分类号 H01L29/84
代理机构 Kenyon & Kenyon LLP 代理人 Kenyon & Kenyon LLP
主权项 1. A component, comprising: at least one MEMS element having a micromechanical structure; a cap for the micromechanical structure of the MEMS element; and at least one ASIC substrate; wherein: the micromechanical structure of the MEMS element is implemented in a functional layer of an SOI wafer functioning as the MEMS substrate;the MEMS element is mounted face down, with the structured functional layer on the ASIC substrate;the cap is implemented in the substrate of the SOI wafer;the ASIC substrate includes a starting substrate, which is provided with a layered structure on both sides, at least one circuit level being implemented in each case both in the MEMS-side layered structure and also in the rear-side layered structure of ASIC substrate; andin the ASIC substrate, at least one ASIC through contact is implemented which, originating from the rear side of the component, electrically contacts at least one of a circuit level of the rear-side layered structure and a circuit level of the MEMS-side layered structure.
地址 Stuttgart DE