| 发明名称 | Gate-all-around integrated circuit devices | ||
| 摘要 | Gate-all-around integrated circuit devices include first and second source/drain regions on an active area of an integrated circuit substrate. The first and second source/drain regions form p-n rectifying junctions with the active area. A channel region extends between the first and second source/drain regions. An insulated gate electrode surrounds the channel region. | ||
| 申请公布号 | US8835993(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201213411699 | 申请日期 | 2012.03.05 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Yun Eun-jung;Lee Sung-young;Kim Min-sang;Kim Sung-min |
| 分类号 | H01L29/78;H01L29/786;H01L29/423 | 主分类号 | H01L29/78 |
| 代理机构 | Myers Bigel Sibley & Sajovec, PA | 代理人 | Myers Bigel Sibley & Sajovec, PA |
| 主权项 | 1. A gate-all-around integrated circuit device, comprising: first and second source/drain regions on an active area of an integrated circuit substrate, wherein the first and second source/drain regions are raised above an upper surface of the integrated circuit substrate; a channel region extending between the first and second source/drain regions; an insulated gate electrode above the channel region; and an insulating region between the first source/drain region and the active area and between the second source/drain region and the active area. | ||
| 地址 | KR | ||