| 发明名称 |
Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial SiGe |
| 摘要 |
A method for forming epitaxial SiGe of a PMOS transistor. In an example embodiment, the method may include providing a semiconductor wafer having a PMOS transistor gate stack, extension sidewalls, source/drain extension regions, and active regions. The method may also include performing a recess etch of the active regions and forming epitaxial SiGe within the recessed active regions by forming a selective epi SiGe region coupled to the surface of the recessed active regions and a selective carbon-doped epitaxial cap layer coupled to the selective epi SiGe region. |
| 申请公布号 |
US8835263(B2) |
申请公布日期 |
2014.09.16 |
| 申请号 |
US200711677496 |
申请日期 |
2007.02.21 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Weijtmans Johan;Lu Jiong-Ping;Wise Rick |
| 分类号 |
H01L21/336;H01L29/78;H01L29/165;H01L29/66;H01L21/8238 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
Keagy Rose Alyssa;Telecky, Jr. Frederick J. |
| 主权项 |
1. A method for forming epitaxial SiGe of a PMOS transistor in a semiconductor wafer, comprising:
providing said semiconductor wafer having a PMOS transistor gate stack, extension sidewalls, source/drain extension regions, and active regions; performing a recess etch of said active regions; and forming said epitaxial SiGe within said recessed active regions by forming a selective epi SiGe region coupled to a surface of said recessed active regions and a selective carbon-doped epi cap layer located over said selective epi SiGe region. |
| 地址 |
Dallas TX US |
