CMOS integrated circuit and amplifying circuit

摘要

There is provided a CMOS integrated circuit capable of avoiding deterioration of NF characteristic and achieving a high degree of linearity in the case in which an LNA circuit is formed on an SOI substrate and an LAN circuit is formed in a bulk CMOS process. The CMOS integrated circuit includes a field effect transistor having a gate electrode connected to a signal input terminal, a drain electrode connected to a power terminal, and a source electrode connected to a ground terminal, wherein the field effect transistor is formed on the SOI substrate and a connection between a body potential and a potential lower than a source potential are formed by a resistor element. The deterioration of NF characteristic can be avoided and a high degree of linearity can be achieved by using this CMOS integrated circuit.

主权项

1. A complementary metal-oxide-semiconductor (CMOS) integrated circuit, comprising a field effect transistor having a gate electrode connected to a signal input terminal, a drain electrode connected to a power terminal, and a source electrode connected to a ground terminal,
the field effect transistor being formed on a silicon on insulator (SOI) substrate and a connection between a body potential and a potential lower than a source potential being formed by a resistor element, wherein the resistance value of the resistor element is 10 times that of an R value satisfying Equation 1 below,R=⁢1ω⁢⁢Cgb=⁢12⁢π⁢⁢fCgb[Equation⁢⁢1] where Cgb is gate-body parasitic capacitance and to is angular frequency of signal inputted to the field effect transistor.