发明名称 Method of manufacturing implant and method of manufacturing artificial dental root
摘要 A method for producing an implant whose surface is roughened by the sandblast method using shot material containing fluoroapatite. Fluoroapatite, compared to hydroxyapatite, has poor biocompatibility, but is superior in hardness. It also has a property of being dissolved in acid. As a result, by the sandblast method using shot material containing fluoroapatite, the surface roughening is performed quite effectively, and shot materials remained on the surface can easily be removed by acid.
申请公布号 US8834233(B2) 申请公布日期 2014.09.16
申请号 US200812441219 申请日期 2008.12.09
申请人 Yamahachi Dental Mfg., Co. 发明人 Aoki Hideki;Toyama Masashi;Fujimaki Hiroto;Hashimoto Yuki
分类号 B24C1/06;A61C8/00;A61F2/28;B24C11/00;A61C13/00;A61F2/30 主分类号 B24C1/06
代理机构 Osha Liang LLP 代理人 Osha Liang LLP
主权项 1. A method for producing an implant comprising a step of roughening a surface of an implant by a sand blast method, wherein the step of roughening includes a step of colliding a shot material with the surface of the implant, the shot material comprising fluoroapatite, further comprising: a step of removing the shot material, performed after the step of roughening, by putting acid on the implant, the shot material being collided with the surface of the implant and attached thereto,wherein the acid is a hydrochloric acid aqueous solution with a concentration ranging from 1 N to 6 N, or a nitric acid aqueous solution with a concentration ranging from 1 N to 6 N, a coating step of sputter coating a calcium phosphate based material film on the implant, the thickness of the film being from 1 to 2 micrometers, after the step of removing the shot material, and a hydrothermal treatment step using an alkali aqueous solution, performed after the coating step, wherein the alkali aqueous solution consists of one or more alkaline compounds selected from the group consisting of NaOH, KOH and NH4OH and a pH range of the alkali aqueous solution is equal to or more than pH 9, andwherein the implant is soaked in the alkali aqueous solution at a temperature ranging from 100° C. to 150° C. for 3 hours to 24 hours under 2 to 10 atmospheric pressure.
地址 Aichi JP