发明名称 Thin film transistor array panel and a method for manufacturing the same
摘要 A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors.
申请公布号 US8836878(B2) 申请公布日期 2014.09.16
申请号 US201313951543 申请日期 2013.07.26
申请人 Samsung Display Co., Ltd. 发明人 Lee Young-Wook;Kim Jang-Soo
分类号 G02F1/136;G02F1/1362;H01L27/12 主分类号 G02F1/136
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A thin film transistor array panel comprising: a substrate; a gate line disposed on the substrate; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; an organic insulating layer disposed on the gate line, the data line, and the thin film transistor; a first electrode which has a planar shape disposed on the organic insulating layer; a passivation layer disposed on the first electrode; and a second electrode disposed on the passivation layer, and including a plurality of branch electrodes which are inclined at an angle to the gate line or the data line, wherein the first electrode overlaps the second electrode, wherein the first electrode contacts the organic insulating layer.
地址 Yongin, Gyeonggi-Do KR