Flash memory

摘要

A MONOS Charge-Trapping flash (CTF), with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125° C. and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125° C. A MoN—[SiO2—LaAlO3]—[Ge—HfON]—[LaAlO3—SiO2]—Si CTF device is also provided with record-thinnest 2.5-nm Equivalent-Si3N4-Thickness (ENT) trapping layer, large 4.4 V initial memory window, 3.2 V 10-year extrapolated retention window at 125° C., and 3.6 V endurance window at 106 cycles, under very fast 100 μs and low ±16 V program/erase. These were achieved using Ge reaction with HfON trapping layer for better charge-trapping and retention.

主权项

1. A flash memory, comprising:
a substrate; a first SiO2 layer formed on the substrate; a first high-κ layer formed on the first SiO2 layer; an As-implanted metal oxynitride layer formed on the first high-κ layer; a second high-κ layer formed on the metal-implanted metal oxynitride layer; a second SiO2 layer formed on the second high-κ layer; and a gate layer formed on the second SiO2 layer.