发明名称 |
ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE |
摘要 |
<p>The invention relates to an isolation structure of a semiconductor device. An exemplary isolation structure for a semiconductor device comprises a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an oxide layer of the strained material over the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer which is located on the high-k dielectric layer and fills the trench.</p> |
申请公布号 |
KR20140109223(A) |
申请公布日期 |
2014.09.15 |
申请号 |
KR20130098820 |
申请日期 |
2013.08.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN SHU HAN;WU CHENG HSIEN;KO CHIH HSIN;WANN CLEMENT HSINGJEN |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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