SEMICONDUCTOR DEVICE HAVING DUAL METAL SILICIDE LAYER AND METHOD OF MANUFACTURING THE SAME

摘要

Provided is a semiconductor device having a dual metal silicide layer. The semiconductor having the dual metal silicide layer includes a first epitaxial layer which is provided on both sides of a first metal gate electrode on a substrate; a second epitaxial layer which is provided on both sides of a second metal gate electrode on the substrate and includes a different element from that of the first epitaxial layers; a first metal silicide layer on the first epitaxial layer; a second silicide layer which is formed on the second epitaxial layer and includes different metal from that of the first metal silicide layer; an interlayer insulating film on the first and second metal silicide layers and first and second gate electrodes; and a contact plug which passes through the interlayer insulating film and is disposed within first and second contact plugs exposing the first metal silicide layer and the second metal silicide layer, respectively.