发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
The present invention is to provide a semiconductor memory device. In the device, the critical size of a gate pattern is prevented from changing when forming gate patterns on a sense amplifier area, as the gate patterns in a conjunction area are lengthily formed in the direction identical to the gate patterns arranged at least on the sense amplifier area. Hence, an electrical characteristic of the sense amplifier is prevented from being debased. |
申请公布号 |
KR20140109222(A) |
申请公布日期 |
2014.09.15 |
申请号 |
KR20130098089 |
申请日期 |
2013.08.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SEUNG SEOB;KWON, HYUK JOON |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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