COPOLYMER FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SAME, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SUBSTRATE

摘要

Provided is a copolymer for lithography containing a monomer containing an acid leaving group and a monomer not containing an acid leaving group, in which N(v1)/Nave is from 1.01 to 1.09 and all of N(v2)/Nave, N(v3)/Nave, and N(v4)/Nave are from 0.95 to 1.05 when, among five fractions obtained by dividing an eluate providing a peak according to the copolymer in an elution curve obtained by GPC in order of elution so as to have an equal volume, ratios of monomer units containing an acid leaving group among the total monomer units constituting a copolymer included in the respective fractions from the first which is eluted earliest to the fourth are denoted as N(v1) mol % to N(v4) mol %, respectively, and the ratio of the monomer unit containing an acid leaving group among the total monomer units constituting a copolymer included in the sum of the five fractions is denoted as Nave mol %.