发明名称 |
LASER ANNEALING DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
A laser annealing device according to the invention of the present application is characterized in being provided with: a stage upon which to place an object to be heated; a first laser element which emits a first continuous laser light; first optical assembly which guides the first continuous laser light to the object to be heated, and forms a first irradiated area on the object to be heated; a second laser element which emits a second continuous laser light of shorter wavelength than the first continuous laser light; second optical assembly which guides the second continuous laser light to the object to be heated, and forms a second irradiated area on the object to be heated; and a system controller which scans the first irradiated area and the second irradiated area so as to scan at least a portion of the first irradiated area before scanning the second irradiated area, with regard to each portion of the object to be heated. |
申请公布号 |
WO2014136237(A1) |
申请公布日期 |
2014.09.12 |
申请号 |
WO2013JP56296 |
申请日期 |
2013.03.07 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION;KANADA, KAZUNORI;MINATO, TADAHARU;KAWASE, YUSUKE |
发明人 |
KANADA, KAZUNORI;MINATO, TADAHARU;KAWASE, YUSUKE |
分类号 |
H01L21/268;H01L21/20 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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