发明名称 LASER ANNEALING DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
摘要 A laser annealing device according to the invention of the present application is characterized in being provided with: a stage upon which to place an object to be heated; a first laser element which emits a first continuous laser light; first optical assembly which guides the first continuous laser light to the object to be heated, and forms a first irradiated area on the object to be heated; a second laser element which emits a second continuous laser light of shorter wavelength than the first continuous laser light; second optical assembly which guides the second continuous laser light to the object to be heated, and forms a second irradiated area on the object to be heated; and a system controller which scans the first irradiated area and the second irradiated area so as to scan at least a portion of the first irradiated area before scanning the second irradiated area, with regard to each portion of the object to be heated.
申请公布号 WO2014136237(A1) 申请公布日期 2014.09.12
申请号 WO2013JP56296 申请日期 2013.03.07
申请人 MITSUBISHI ELECTRIC CORPORATION;KANADA, KAZUNORI;MINATO, TADAHARU;KAWASE, YUSUKE 发明人 KANADA, KAZUNORI;MINATO, TADAHARU;KAWASE, YUSUKE
分类号 H01L21/268;H01L21/20 主分类号 H01L21/268
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