| 摘要 |
This arc-plasma film formation device is equipped with: a film formation chamber in which a substrate to be treated is stored; a plasma chamber which connects to the film formation chamber, and in which at least a part of the target is stored; a plurality of hollow coils which are positioned in the plasma chamber, produce a continuous line of magnetic force, and have one or more curved sections positioned between the target and the film formation chamber; and a plasma potential correction tube positioned inside the hollow coils. Therein, plasma containing ions derived from the target material and generated inside the plasma chamber as a result of arc discharge is transported to the substrate from the target by passing through the interior of the plasma potential correction tube. |
