发明名称 LOW LEAKAGE RETENTION REGISTER TRAY
摘要 <p>A particular method includes receiving a retention signal (nret). In response to receiving the retention signal, the method includes retaining state information (q internal, 310) in a non-volatile stage (302) of a retention register (300) and reducing power to a volatile stage (356) of the retention register. The non-volatile stage (302) may be powered by an external voltage source (Vdd ext). The volatile stage may be powered by an internal voltage source (Vddx).</p>
申请公布号 WO2014137714(A1) 申请公布日期 2014.09.12
申请号 WO2014US18811 申请日期 2014.02.26
申请人 QUALCOMM INCORPORATED 发明人 VILANGUDIPITCHAI, RAMAPRASATH;PATEL, PRAYAG BHANUBHAI
分类号 H03K3/356;G06F1/32;H03K3/037;H03K19/00 主分类号 H03K3/356
代理机构 代理人
主权项
地址