| 发明名称 |
APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTALS |
| 摘要 |
<p>The present invention relates to an apparatus and a method for growing high-quality silicon carbide single crystals by coating the inner wall of the existing graphite crucible with tungsten (W). In accordance with the present invention, high-quality silicon carbide single crystals can be grown by coating the inner wall of the existing graphite crucible with tungsten (W).</p> |
| 申请公布号 |
WO2014137072(A1) |
申请公布日期 |
2014.09.12 |
| 申请号 |
WO2014KR00587 |
申请日期 |
2014.01.21 |
| 申请人 |
SKC CO., LTD. |
发明人 |
KIM, JUNG GYU;PARK, JONG HWI;KU, KAP RYEOL;KYUN, MYUNG OK;CHOI, JUNG WOO |
| 分类号 |
C30B15/10;C30B29/06 |
主分类号 |
C30B15/10 |
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