SEMICONDUCTOR DEVICE

摘要

The problem addressed by the present invention is to provide a high-breakdown-voltage semiconductor device of high reliability. As means for solving the problem: in a case of being a Schottky diode, concentration of impurities in a first JTE region is set to be greater than or equal to 4.4 × 1017 cm-3 and less than or equal to 6 × 1017 cm-3, and concentration of impurities in a second JTE region is set to be less than or equal to 2 × 1017 cm-3; and in a case of being a junction barrier Schottky diode, concentration of impurities in the first JTE region is set to be greater than or equal to 6 × 1017 cm-3 and less than or equal to 8 × 1017 cm-3, and concentration of impurities in the second JTE region is set to be less than or equal to 2 × 1017 cm-3.