| 摘要 |
The present invention is a high-purity 2-fluorobutane and a method for using the high-purity 2-fluorobutane as a dry-etching gas. The high-purity 2-fluorobutane is characterized by having a purity of 99.9% by volume or more and by containing 1000 ppm by volume or less of butenes. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided. |
