| 摘要 |
<p>A thin film transistor which has higher On-state current and On/Off ratio and can be driven at a lower voltage. A thin film transistor (10) is provided with: a columnar projection (8) which has a lateral surface (2a) and protrudes from the main surface of a substrate; a gate insulating layer (4), at least a part of which is provided in a channel region (CR) that extends along the lateral surface, and which contains a first layer (4a) and a second layer (4b) and has a thickness of 50 nm or less; a gate electrode (3) which is in contact with the gate insulating layer; a source electrode (5) and a drain electrode (6), which are separated from each other, and one of which is provided so as to at least partially overlap the projection, while the other being provided in a region that does not overlap the projection and the one electrode; and a semiconductor layer (7) which is in contact with at least a part of the source electrode, at least a part of the drain electrode and at least a part of the gate insulating layer within the channel region directly or with a functional layer being interposed therebetween.</p> |
