OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE

摘要

With respect to this oxide for a semiconductor layer of a thin film transistor, metallic elements that constitute the oxide comprise In, Sn, Ga, and Zn, the oxygen partial pressure when forming an oxide film on the semiconductor layer of the thin film transistor is 15 vol% or less (not including 0 vol%), the defect density of the oxide satisfies 2×1016cm-3 or less, and the mobility satisfies 6.2cm2/Vs or more.