发明名称
摘要 <p>A vapor deposition material source and method for forming a vapor deposition material source for use in a vapor deposition process comprising a conductive three-dimensional, open cell, reticulated structure; and a solid coating of a selected vapor deposition material vapor deposited onto the conductive three-dimensional, open cell, reticulated structure by vapor deposition.</p>
申请公布号 JP2014523484(A) 申请公布日期 2014.09.11
申请号 JP20140516205 申请日期 2011.06.22
申请人 发明人
分类号 C23C14/24;C23C14/12;H01L51/50;H05B33/10 主分类号 C23C14/24
代理机构 代理人
主权项
地址