| 主权项 |
1. A pattern-forming method comprising:
providing a resist film on a substrate using a photoresist composition; exposing the resist film; and developing the exposed resist film using a developer having an organic solvent content of 80 mass % or more, the photoresist composition comprising:
a first polymer that is a base polymer and includes a first structural unit that includes an acid-labile group;a second polymer that includes a second structural unit that includes an acid-labile group, and has a fluorine atom content higher than a fluorine atom content of the first polymer; andan acid generator,the second structural unit being represented by a formula (1) or a formula (2),wherein
R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, Z1 is a divalent monocyclic hydrocarbon group having 5 or 6 carbon atoms or a divalent polycyclic hydrocarbon group having 7 to 10 carbon atoms, R2 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and R3 is an alicyclic hydrocarbon group having 5 to 20 carbon atoms, wherein a content of the second polymer is 0.5 to 10 parts by mass based on 100 parts by mass of the first polymer. |
