发明名称 Photoresist Defect Reduction System and Method
摘要 A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.
申请公布号 US2014255851(A1) 申请公布日期 2014.09.11
申请号 US201313790057 申请日期 2013.03.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Wang Wen-Yun;Chang Ching-Yu
分类号 G03F7/40 主分类号 G03F7/40
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, the method comprising: developing a photoresist over a substrate; and cleaning the photoresist after the developing, the cleaning the photoresist comprising applying an alkaline environment to a surface of the photoresist.
地址 Hsin-Chu TW