发明名称 DRIVING METHOD OF SEMICONDUCTOR DEVICE
摘要 A highly reliable semiconductor device and a method for driving the highly reliable semiconductor device is provided. In a semiconductor device in which a light-transmitting storage capacitor having a MOS capacitor structure is provided and a light-transmitting semiconductor film functioning as one electrode of the storage capacitor is electrically connected to a capacitor line, a shift of a threshold voltage of the storage capacitor in the positive direction is suppressed in a period during which an image is not displayed. For example, the shift of the threshold voltage of the storage capacitor in the positive direction is suppressed by application of a negative bias to a pixel electrode functioning as the other electrode of the storage capacitor.
申请公布号 US2014253533(A1) 申请公布日期 2014.09.11
申请号 US201414196368 申请日期 2014.03.04
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 MIYAKE Hiroyuki
分类号 G09G3/36 主分类号 G09G3/36
代理机构 代理人
主权项 1. A method for driving a semiconductor device, the semiconductor device comprising a pixel portion provided with a plurality of pixels each including a transistor and a storage capacitor, the storage capacitor comprising:a first electrode including a light-transmitting semiconductor film;a second electrode; anda dielectric film between the first electrode and the second electrode, wherein in a period during which an image is displayed in the pixel portion, the method comprises steps of: supplying a first potential to the second electrode; supplying a second potential to the first electrode to form a potential difference between the first electrode and the second electrode being a threshold voltage of the storage capacitor or higher; and holding the potential difference between the first electrode and the second electrode to the storage capacitor and displaying the image in the pixel portion, and wherein in a period during which display of the image is stopped, the method comprises a step of supplying a third potential higher than the first potential to the first electrode.
地址 Atsugi-shi JP