发明名称 |
DRIVING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A highly reliable semiconductor device and a method for driving the highly reliable semiconductor device is provided. In a semiconductor device in which a light-transmitting storage capacitor having a MOS capacitor structure is provided and a light-transmitting semiconductor film functioning as one electrode of the storage capacitor is electrically connected to a capacitor line, a shift of a threshold voltage of the storage capacitor in the positive direction is suppressed in a period during which an image is not displayed. For example, the shift of the threshold voltage of the storage capacitor in the positive direction is suppressed by application of a negative bias to a pixel electrode functioning as the other electrode of the storage capacitor. |
申请公布号 |
US2014253533(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201414196368 |
申请日期 |
2014.03.04 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
MIYAKE Hiroyuki |
分类号 |
G09G3/36 |
主分类号 |
G09G3/36 |
代理机构 |
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代理人 |
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主权项 |
1. A method for driving a semiconductor device,
the semiconductor device comprising a pixel portion provided with a plurality of pixels each including a transistor and a storage capacitor,
the storage capacitor comprising:a first electrode including a light-transmitting semiconductor film;a second electrode; anda dielectric film between the first electrode and the second electrode, wherein in a period during which an image is displayed in the pixel portion, the method comprises steps of: supplying a first potential to the second electrode; supplying a second potential to the first electrode to form a potential difference between the first electrode and the second electrode being a threshold voltage of the storage capacitor or higher; and holding the potential difference between the first electrode and the second electrode to the storage capacitor and displaying the image in the pixel portion, and wherein in a period during which display of the image is stopped, the method comprises a step of supplying a third potential higher than the first potential to the first electrode. |
地址 |
Atsugi-shi JP |