| 发明名称 |
Semiconductor Device with Trench Structure and Methods of Manufacturing |
| 摘要 |
A vertical semiconductor device includes a semiconductor body having semiconductor portions of semiconductor elements of the vertical semiconductor device, a front side contact on a front surface of the semiconductor body and a back side contact on an opposite back surface of the semiconductor body, and a trench structure extending from the front surface into the semiconductor body. The trench structure includes an etch stop layer lining an inner surface of the trench structure and surrounding a void within the trench structure. |
| 申请公布号 |
US2014252563(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201414281329 |
申请日期 |
2014.05.19 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schulze Hans-Joachim;Mauder Anton |
| 分类号 |
H01L29/06;H01L21/78 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A vertical semiconductor device, comprising:
a semiconductor body that comprises semiconductor portions of semiconductor elements of the vertical semiconductor device; a front side contact on a front surface of the semiconductor body and a back side contact on an opposite back surface of the semiconductor body; and a trench structure extending from the front surface into the semiconductor body, the trench structure comprising an etch stop layer lining an inner surface of the trench structure and surrounding a void within the trench structure. |
| 地址 |
Neubiberg DE |
