发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor device includes line patterns disposed on a substrate, the line patterns extending in a first direction and being parallel to one another. The semiconductor device includes conductive patterns spaced apart from each other in the first direction between an adjacent pair of the line patterns. The semiconductor device includes insulating fences electrically isolating the conductive patterns from each other and having chamfered corners. The semiconductor device includes insulating patterns filling gaps between side surfaces of the line patterns and the chamfered corners of the insulating fences.
申请公布号 US2014252536(A1) 申请公布日期 2014.09.11
申请号 US201414182686 申请日期 2014.02.18
申请人 CHOI Yonggyu;KIM Dong-hyun;OH Yongchul;NAM Kichul 发明人 CHOI Yonggyu;KIM Dong-hyun;OH Yongchul;NAM Kichul
分类号 H01L29/06;H01L23/485 主分类号 H01L29/06
代理机构 代理人
主权项 1. A semiconductor device, comprising: line patterns disposed on a substrate, the line patterns extending in a first direction and being parallel to one another; conductive patterns spaced apart from each other in the first direction between an adjacent pair of the line patterns; insulating fences electrically isolating the conductive patterns from each other and having chamfered corners; and insulating patterns filling gaps between side surfaces of the line patterns and the chamfered corners of the insulating fences.
地址 Seongnam-si KR