| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
Provided is a method for fabricating a semiconductor device, including the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar. A doped region is formed in the substrate and below each pillar. The doped region below each trench is removed to form an opening such that the doped regions below the adjacent pillars are separated from each other. A shielding layer is formed in each opening. |
| 申请公布号 |
US2014252532(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313792231 |
申请日期 |
2013.03.11 |
| 申请人 |
Yang Sheng-Wei;Chuang Ying-Cheng;Surthi Shyam |
发明人 |
Yang Sheng-Wei;Chuang Ying-Cheng;Surthi Shyam |
| 分类号 |
H01L29/06;H01L21/765 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, comprising:
providing a substrate having a plurality of pillars, wherein a plurality of trenches are formed around each pillar; forming a doped region in the substrate below each pillar; removing the doped region below each trench to form an opening such that the doped regions below the adjacent pillars are separated from each other; and forming a shielding layer inside each of the opening. |
| 地址 |
Taoyuan County TW |
