| 发明名称 |
Multi-Layer Metal Contacts |
| 摘要 |
A method for forming metal contacts within a semiconductor device includes forming a first-layer contact into a first dielectric layer that surrounds at least one gate electrode, the first-layer contact extending to a doped region of an underlying substrate. The method further includes forming a second dielectric layer over the first dielectric layer and forming a second-layer contact extending through the second dielectric layer to the first-layer contact. |
| 申请公布号 |
US2014252433(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313911183 |
申请日期 |
2013.06.06 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd . |
发明人 |
Shieh Ming-Feng;Tseng Wen-Hung;Lai Chih-Ming;Hsieh Ken-Hsien;Gau Tsai-Sheng;Liu Ru-Gun |
| 分类号 |
H01L21/283;H01L29/40 |
主分类号 |
H01L21/283 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming metal contacts within a semiconductor device, the method comprising:
forming a first-layer contact in a first dielectric layer that surrounds a gate electrode, the first-layer contact extending to a doped source/drain region of an underlying substrate; forming a second dielectric layer over the first dielectric layer; forming a second-layer contact extending through the second dielectric layer to the first-layer contact. |
| 地址 |
Hsin-Chu TW |
