发明名称 |
PHOTOMASK BLANK, PHOTOMASK PRODUCTION METHOD AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a photomask blank which achieves good pattern accuracy by optimizing the dry etching rate in the depth direction of a light-shielding film.SOLUTION: A photomask blank has a light-shielding film on a translucent substrate and is for a dry etching treatment corresponding to a method of forming a photomask by patterning the light-shielding film by a dry etching treatment with a mask pattern formed on the light-shielding film as a mask. The dry etching rate on the translucent substrate side of the light-shielding film is set to be lower than the dry etching rate on the front surface side of the light-shielding film. |
申请公布号 |
JP2014167650(A) |
申请公布日期 |
2014.09.11 |
申请号 |
JP20140098418 |
申请日期 |
2014.05.12 |
申请人 |
HOYA CORP |
发明人 |
YAMADA TAKAYUKI;KOMINATO ATSUSHI;IWASHITA HIROYUKI;HASHIMOTO MASAHIRO;OKUBO YASUSHI |
分类号 |
G03F1/80;G03F1/00;G03F1/32;G03F1/54;H01L21/027 |
主分类号 |
G03F1/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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