发明名称 PHOTOMASK BLANK, PHOTOMASK PRODUCTION METHOD AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a photomask blank which achieves good pattern accuracy by optimizing the dry etching rate in the depth direction of a light-shielding film.SOLUTION: A photomask blank has a light-shielding film on a translucent substrate and is for a dry etching treatment corresponding to a method of forming a photomask by patterning the light-shielding film by a dry etching treatment with a mask pattern formed on the light-shielding film as a mask. The dry etching rate on the translucent substrate side of the light-shielding film is set to be lower than the dry etching rate on the front surface side of the light-shielding film.
申请公布号 JP2014167650(A) 申请公布日期 2014.09.11
申请号 JP20140098418 申请日期 2014.05.12
申请人 HOYA CORP 发明人 YAMADA TAKAYUKI;KOMINATO ATSUSHI;IWASHITA HIROYUKI;HASHIMOTO MASAHIRO;OKUBO YASUSHI
分类号 G03F1/80;G03F1/00;G03F1/32;G03F1/54;H01L21/027 主分类号 G03F1/80
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