| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method which exhibits excellent resolving power in the formation of an isolated space pattern having an ultrafine space width (for example, a space width of 30 nm or less).SOLUTION: The pattern forming method includes steps of: forming a resist film by using an actinic ray-sensitive or radiation-sensitive resin composition which comprises a resin that induces increase in the polarity by an action of an acid to decrease the solubility with a developing solution containing an organic solvent, and a compound that is decomposed by irradiation with actinic rays or radiation to generate an acid; forming a protective film by using a protective film composition on the resist film; exposing the resist film having the protective film to an electron beam or extreme ultraviolet rays; and developing the resist film by using the developing solution containing an organic solvent. |
