发明名称 CURRENT SENSOR
摘要 A current sensor comprises a housing of plastic, a current conductor with integrally shaped first and second electrical terminals, through which a current to be measured is supplied and discharged, third electrical terminals, and a semiconductor chip having at least one magnetic field sensor, which is sensitive to a component of the magnetic field generated by the current flowing through the current conductor running perpendicularly to the surface of the semiconductor chip. The first and second electrical terminals are arranged at a first side of the housing, the third electrical terminals are arranged at a side of the housing opposite to the first side. The semiconductor chip is mounted as flip chip. The semiconductor chip comprises first bumps, which make electrical connections to the third terminals, and second bumps located above the current conductor and electrically separated from the semiconductor chip by an isolation layer.
申请公布号 US2014253103(A1) 申请公布日期 2014.09.11
申请号 US201414197372 申请日期 2014.03.05
申请人 Melexis Technologies NV 发明人 Racz Robert;Chen Jian;Ackermann Mathieu
分类号 G01R1/04 主分类号 G01R1/04
代理机构 代理人
主权项 1. Current sensor, comprising a housing of plastic, a current conductor with integrally shaped first and second electrical terminals, through which a current to be measured is supplied and discharged, third electrical terminals, a semiconductor chip having an active surface with at least one magnetic field sensor, which is sensitive to a component of the magnetic field generated by the current flowing through the current conductor running perpendicularly to the active surface of the semiconductor chip, wherein the first and second electrical terminals are arranged at a first side of the housing and the third electrical terminals are arranged at a side of the housing opposite to the first side, wherein the active surface of the semiconductor chip faces the current conductor and electrical connection surfaces of the semiconductor chip are connected to the third electrical terminals by first bumps, wherein second bumps are located on the current conductor or on projections of the current conductor and wherein the second bumps are electrically separated from the semiconductor chip by an isolation layer.
地址 Tessenderlo BE